1. Status

In recent years, temperable low-e glass (large-panel film glass) has been promoted to a certain extent in my country, but the overall quality is not high enough, because the existing low-e glass has insufficient mechanical scratch resistance and high temperature oxidation resistance. Not strong enough, high-performance products cost a lot, so solving the above problems is imminent.

In the field of large-area coating, SiNx dielectric film is more and more widely used. SiNx has good corrosion resistance, mechanical scratch resistance, and high temperature oxidation resistance. Therefore, SiNx is used as the outer protective layer, and the outer layer of the currently available temperable low-e glass is also the SiNx material. The introduction of temperable low-e glass into the market has made the application of low-e glass widely popularized. However, low-e glass is still not widely used in the field of civil construction, and its important problem is the high cost. Reducing the cost of low-e glass will become an important topic in popularizing low-e glass, and it will also become a hot topic for major glass processing companies. The main reason for the cost of Low-e glass is that the production cost is too high. The effective way to solve the production cost is to improve the production efficiency. At present, most companies increase the speed of glass in the coating machine and increase the power of the sputtering target to improve efficiency and reduce costs. When ensuring the thickness of the low-e glass film, the faster the glass travels, the higher the corresponding sputtering target power will be. The thickness of the dielectric layer SiNx is very thick in the low-e glass film layer. As the power of the silicon aluminum target increases, the problem of slag removal will become more and more serious. The fundamental reason is limited by the sputtering rate of the Si-Al target.

2. Introduction of silicon carbide materials

Silicon carbide (SiC) is made of quartz sand, petroleum coke (or coal coke) and wood chips as raw materials through high temperature smelting in a resistance furnace. Silicon carbide also exists in nature as a rare mineral, moissanite. Silicon carbide is also called moissanite. Among contemporary non-oxide high-tech refractory raw materials such as C, N, and B, silicon carbide is a widely used and economical one. It can be called gold steel sand or refractory sand. Silicon carbide is made from raw materials such as quartz sand, petroleum coke (or coal coke), and sawdust (salt is required to produce green silicon carbide) in a resistance furnace through high temperature smelting. The crystal structure of silicon carbide is divided into hexagonal or rhombohedral α-SiC and cubic β-SiC (called cubic silicon carbide). α-SiC constitutes many different variants due to the different stacking sequences of carbon and silicon atoms in its crystal structure, more than 70 species have been discovered. β-SiC transforms into α-SiC when the temperature is above 2100°C. The hardness of silicon carbide is very large, with a Mohs hardness of 9.5, second only to the world's hardest diamond (grade 10). It has excellent thermal conductivity and is a semiconductor that resists oxidation at high temperatures.

-转自中国玻璃网